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NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
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12 VOLTS, 1.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 400 mW
COLLECTOR 3 1 BASE 2 EMITTER
* * * * * *
High Current Capability (1 A) High Power Handling (Up to 740 mW) Low VCE(s) (200 mV Typical @ 500 mA) Small Size Low Noise This is a Pb-Free Device
3 2 1
WDFN3 CASE 506AU
Benefits
* High Specific Current and Power Capability Reduces Required PCB Area * Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS (TA = 25C)
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -12 -12 -5.0 -1.0 -2.0 Unit Vdc Vdc Vdc Adc
MARKING DIAGRAM
VG M G 1 VG = Specific Device Code M = Date Code G = Pb-Free Package
ORDERING INFORMATION
Device NSS12100UW3TCG Package WDFN3 (Pb-Free) Shipping 3000/ Tape & Reel
HBM Class 3B MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
1
April, 2008 - Rev. 0
Publication Order Number: NSS12100UW3/D
NSS12100UW3TCG
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation, TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation, TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead 6 Junction and Storage Temperature Range 1. FR- 4 @ 100 mm2, 1 oz copper traces. 2. FR- 4 @ 500 mm2, 1 oz copper traces. Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) RqJL (Note 2) TJ, Tstg Max 740 6.0 169 1.1 9.0 110 33 -55 to +150 Unit mW mW/C C/W W mW/C C/W C/W C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage, (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage, (IC = -0.1 mAdc, IE = 0) Emitter - Base Breakdown Voltage, (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current, (VCB = -12 Vdc, IE = 0) Emitter Cutoff Current, (VCES = -5.0 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) Collector - Emitter Saturation Voltage (Note 3) (IC = -0.05 A, IB = -0.005 A) (Note 4) (IC = -0.1 A, IB = -0.002 A) (IC = -0.1 A, IB = -0.010 A) (IC = -0.5 A, IB = -0.050 A) (IC = -1.0 A, IB = -0.100 A) Base - Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.01 A) Base - Emitter Turn-on Voltage (Note 3) (IC = -2.0 A, VCE = -1.0 V) Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = -10 V, IC = 750 mA, IB1 = 15 mA) Rise (VCC = -10 V, IC = 750 mA, IB1 = 15 mA) Storage (VCC = -10 V, IC = 750 mA, IB1 = 15 mA) Fall (VCC = -10 V, IC = 750 mA, IB1 = 15 mA) SMALL-SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product, (IC = -100 mA, VCE = -5 Vdc, f = 100 MHz) Noise Figure, (IC = -0.2 mA, VCE = -5 Vdc, RS = 2 kW, f = 1 kHz, BW = 200Hz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. 4. Guaranteed by design but not tested. fT NF 200 5.0 MHz dB td tr ts tf 20 90 140 100 ns ns ns ns hFE 200 100 75 VCE(sat) VBE(sat) VBE(on) Cibo Cobo -1.05 40 15 -1.20 50 20 pF pF -0.95 -1.15 V -0.030 -0.080 -0.050 -0.200 -0.400 -0.040 -0.100 -0.060 -0.225 -0.440 V 400 250 V V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -12 -12 -5.0 -0.02 -0.03 -0.1 -0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Typ Max Unit
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NSS12100UW3TCG
1.0 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 -55C IC/IB = 10 VCE(sat) = 150C 25C 3.0 IC/IB = 100 2.5 2.0 150C 1.5 1.0 0.5 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 VCE(sat) = -55C 25C
Figure 1. Collector Emitter Saturation Voltage vs. Collector Current
600 150C (5.0 V) hFE, DC CURRENT GAIN 500 150C (2.0 V) 400 300 200 -55C (2.0 V) 100 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 25C (5.0 V) 25C (2.0 V) -55C (5.0 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V)
Figure 2. Collector Emitter Saturation Voltage vs. Collector Current
1.4 IC/IB = 10 1.2 1.0 TA = -55C 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 25C 150C
Figure 3. DC Current Gain vs. Collector Current
VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 4. Base Emitter Saturation Voltage vs. Collector Current
1.4 VCE = -1.0 V 1.2 1.0 TA = -55C 0.8 0.6 0.4 150C 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 25C
1.0 10 mA 0.8 100 mA 300 mA IC = 500 mA
0.6
0.4
0.2 0 0.01 0.1 1 10 100 IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn-On Voltage vs. Collector Current
Figure 6. Saturation Region
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NSS12100UW3TCG
50 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 45 40 Cibo(pF) 35 30 25 20 0 2 1 3 4 VEB, EMITTER BASE VOLTAGE (V) 5 30 25 Cobo(pF) 20 15 10 5 0 0 1 2 3 4 5 6 7 8 VCB, COLLECTOR BASE VOLTAGE (V) 9 10
Figure 7. Input Capacitance
Figure 8. Output Capacitance
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NSS12100UW3TCG
PACKAGE DIMENSIONS
WDFN3 CASE 506AU-01 ISSUE O
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L MIN 0.70 0.00 0.25 1.40 0.90 MILLIMETERS NOM MAX 0.75 0.80 0.05 0.20 REF 0.30 0.35 2.00 BSC 1.50 1.60 2.00 BSC 1.00 1.10 1.30 BSC 0.35 REF 0.40 0.45 MIN 0.028 0.000 0.010 INCHES NOM 0.030 MAX 0.031 0.002 0.014 0.063 0.043
D
A B
PIN ONE REFERENCE
2X
0.10 C
2X
0.10 C
0.10 C
8X
0.08 C
SEATING PLANE
A1
2X
L K 0.400 1.600 E2 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.275
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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CCCC CCCC CCCC CCCC
D2 e
1
E
0.35
0.008 REF 0.012 0.079 BSC 0.055 0.059 0.079 BSC 0.035 0.039 0.051 BSC 0.014 REF 0.014 0.016
0.018
TOP VIEW
SOLDERING FOOTPRINT*
A
2X
1.300 0.400 0.600 C 0.250 1.100
SIDE VIEW
(A3)
e/2
2
0.300
3 3X
b
0.10 C A B 0.05 C
NOTE 3
BOTTOM VIEW
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NSS12100UW3/D

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